IGBT(Insulated Gate Bipolar Transistor)，绝缘栅双极型晶体管，是由BJT（双极型三极管）和MOS（绝缘栅型场效应管）组成的复合全控型电压驱动式功率半导体器件，兼有MOSFET的高输入阻抗和GTR的低导通压降两方面的优点。GTR饱和压降低，载流密度大，但驱动电流较大；MOSFET驱动功率很小，开关速度快，但导通压降大，载流密度小。IGBT综合了以上两种器件的优点，驱动功率小而饱和压降低。 85.3

1492-ACABLE010UD  Pre-wired Cable for 1756-IF16

1492-ACABLE010WB  Cable for 1756-OF8 or 1756-OF8H Modules

1492-ACABLE015UB  Pre-Wi /p>

1492-ACABLE015WB  Pre-Wired Cable For 1756-OF8

1492-ACABLE025E  Pre-Wired Cable For 1771-IFE

1492-ACABLE025G  Pre-Wired Cable For 1771-OFE

1492-ACABLE025WB  Pre-Wired Cable For 1756-OF8

1492-AIFM16-F-5  Analog Interface M  Analog Terminal Module

1492-AIFM4C-F-5  Interface Module

1492-AIFM6S-3  Analog Terminal Module

1492-AIFM8-3  Feed-Through 8 Channel Input or Output IFM

1492-AIFM8-F-5  Fusible 8 Channel Analog Interface Module

1492-CA1C  Terminal Block